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8302am-01 www.icst.com/products/hiperclocks.html rev. a december 10, 2002 1

ics8302-01 l ow s kew , 1- to -2 lvcmos / lvttl f anout b uffer w / c omplementary o utput g eneral d escription the ics830 2-01 is a low skew, 1-to-2 lvcmos/lvttl fanout buffer w/complemen- tary output and a member of the hiperclocks? family of high performance clock solutions from ics. the ics8302-01 has a single ended clock input. the single ended clock input accepts lvcmos or lvttl input levels. the ics830 2-01 is characterized at full 3.3v for input v dd , and mixed 3.3v and 2.5v for output operating supply modes (v ddo ). guaranteed output and part-to-part skew characteristics make the ics830 2-01 ideal for clock distribution applications demanding well defined performance and repeatability. f eatures complementary lvcmos / lvttl output lvcmos / lvttl clock input accepts lvcmos or lvttl input levels maximum output frequency: 250mhz output skew: 165ps (maximum) part-to-part skew: 800ps (maximum) small 8 lead soic package saves board space full 3.3v or 3.3v core, 2.5v supply modes 0c to 70c ambient operating temperature industrial temperature information available upon request b lock d iagram p in a ssignment ics8302-01 8-lead soic 3.8mm x 4.8mm, x 1.47mm package body m package to p vi e w v ddo v dd clk gnd 1 2 3 4 q nq clk hiperclocks? q gnd v ddo nq 8 7 6 5
8302am-01 www.icst.com/products/hiperclocks.html rev. a december 10, 2002 2

ics8302-01 l ow s kew , 1- to -2 lvcmos / lvttl f anout b uffer w / c omplementary o utput t able 1. p in d escriptions t able 2. p in c haracteristics l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u c n i e c n a t i c a p a c t u p n i 4f p c d p e c n a t i c a p a c n o i t a p i s s i d r e w o p ) t u p t u o r e p ( v d d v , o d d v 5 6 4 . 3 =2 2f p v d d v , v 5 6 4 . 3 = o d d v 5 2 6 . 2 =6 1f p r p u l l u p r o t s i s e r p u l l u p t u p n i 1 5k ? r n w o d l l u p r o t s i s e r n w o d l l u p t u p n i 1 5k ? r t u o e c n a d e p m i t u p t u o 7 ? r e b m u ne m a ne p y tn o i t p i r c s e d 6 , 1v o d d r e w o p. s n i p y l p p u s t u p t u o 2v d d r e w o p. n i p y l p p u s e r o c 3k l ct u p n in w o d l l u p. t u p n i k c o l c l t t v l / s o m c v l 7 , 4d n gr e w o p. d n u o r g y l p p u s r e w o p 5q nt u p t u o . s l e v e l e c a f r e t n i l t t v l / s o m c v l . t u p t u o k c o l c y r a t n e m e l p m o c 8q t u p t u o. s l e v e l e c a f r e t n i l t t v l / s o m c v l . t u p t u o k c o l c : e t o n p u l l u p d n a n w o d l l u p . s e u l a v l a c i p y t r o f , s c i t s i r e t c a r a h c n i p , 2 e l b a t e e s . s r o t s i s e r t u p n i l a n r e t n i o t r e f e r
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ics8302-01 l ow s kew , 1- to -2 lvcmos / lvttl f anout b uffer w / c omplementary o utput t able 3a. p ower s upply dc c haracteristics , v dd = v ddo = 3.3v5%, t a = 0 c to 70 c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u v d d e g a t l o v y l p p u s e r o c 5 3 1 . 33 . 35 6 4 . 3v v o d d e g a t l o v y l p p u s r e w o p t u p t u o 5 3 1 . 33 . 35 6 4 . 3v i d d t n e r r u c y l p p u s r e w o p 3 1a m i o d d t n e r r u c y l p p u s t u p t u o 4a m t able 3b. lvcmos / lvttl dc c haracteristics , v dd = v ddo = 3.3v5%, t a = 0 c to 70 c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u v h i e g a t l o v h g i h t u p n i2v d d 3 . 0 +v v l i e g a t l o v w o l t u p n i 3 . 0 -3 . 1v i h i t n e r r u c h g i h t u p n ik l cv d d v = n i v 5 6 4 . 3 =0 5 1a i l i t n e r r u c w o l t u p n ik l cv d d v , v 5 6 4 . 3 = n i v 0 =5 -a v h o e g a t l o v h g i h t u p t u o 0 5 ? v o t o d d 2 /6 . 2v i h o a 0 0 1 - =9 . 2v v l o e g a t l o v w o l t u p t u o 0 5 ? v o t o d d 2 /5 . 0v i l o a 0 0 1 =2 . 0v a bsolute m aximum r atings supply voltage, v dd 4.6v inputs, v i -0.5v to v dd + 0.5 v outputs, v o -0.5v to v ddo + 0.5v package thermal impedance, ja 112.7 c/w (0 lfpm) storage temperature, t stg -65 c to 150 c note: stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these ratings are stress specifications only. functional operation of product at these conditions or any conditions be- yond those listed in the dc characteristics or ac character- istics is not implied. exposure to absolute maximum rating conditions for extended periods may affect product reliability. t able 4a. ac c haracteristics , v dd = v ddo = 3.3v5%, t a = 0 c to 70 c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u f x a m y c n e u q e r f t u p t u o 0 5 2z h m p t h l 1 e t o n ; h g i h - o t - w o l , y a l e d n o i t a g a p o r p 8 . 18 1 . 27 . 2s n t ) o ( k s4 , 2 e t o n ; w e k s t u p t u o 0 55 6 1s p t ) p p ( k s4 , 3 e t o n ; w e k s t r a p - o t - t r a p 0 0 8s p t r t / f e m i t l l a f / e s i r t u p t u o% 0 8 o t % 0 20 0 30 0 8s p c d oe l c y c y t u d t u p t u o ? z h m 3 3 15 45 5% ? < z h m 3 3 1 z h m 0 5 20 40 6% v m o r f d e r u s a e m : 1 e t o n d d v o t t u p n i e h t f o 2 / o d d . t u p t u o e h t f o 2 / . s n o i t i d n o c d a o l l a u q e h t i w d n a e g a t l o v y l p p u s e m a s e h t t a s t u p t u o n e e w t e b w e k s s a d e n i f e d : 2 e t o n v t a d e r u s a e m o d d . 2 / s e g a t l o v y l p p u s e m a s e h t t a g n i t a r e p o s e c i v e d t n e r e f f i d n o s t u p t u o n e e w t e b w e k s s a d e n i f e d : 3 e t o n d e r u s a e m e r a s t u p t u o e h t , e c i v e d h c a e n o s t u p n i f o e p y t e m a s e h t g n i s u . s n o i t i d n o c d a o l l a u q e h t i w d n a v t a o d d . 2 / . 5 6 d r a d n a t s c e d e j h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h t : 4 e t o n
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ics8302-01 l ow s kew , 1- to -2 lvcmos / lvttl f anout b uffer w / c omplementary o utput t able 4b. ac c haracteristics , v dd = 3.3v5%, v ddo = 2.5v5%, t a = 0 c to 70 c t able 3c. p ower s upply dc c haracteristics , v dd = 3.3v5%, v ddo = 2.5v5%, t a = 0 c to 70 c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u v d d e g a t l o v y l p p u s e v i t i s o p 5 3 1 . 33 . 35 6 4 . 3v v o d d e g a t l o v y l p p u s t u p t u o 5 7 3 . 25 . 25 2 6 . 2v i d d t n e r r u c y l p p u s r e w o p 3 1a m i o d d t n e r r u c y l p p u s t u p t u o 4a m t able 3d. lvcmos / lvttl dc c haracteristics , v dd = 3.3v5%, v ddo = 2.5v5%, t a = 0 c to 70 c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u v h i e g a t l o v h g i h t u p n i2v d d 3 . 0 +v v l i e g a t l o v w o l t u p n i 3 . 0 -3 . 1v i h i t n e r r u c h g i h t u p n ik l cv d d v = n i v 5 6 4 . 3 =0 5 1a i l i t n e r r u c w o l t u p n ik l cv d d v , v 5 6 4 . 3 = n i v 0 =5 -a v h o e g a t l o v h g i h t u p t u o 0 5 ? v o t o d d 2 /8 . 1v i h o a 0 0 1 - =2 . 2v v l o e g a t l o v w o l t u p t u o 0 5 ? v o t o d d 2 /5 . 0v i l o a 0 0 1 =2 . 0 v l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u f x a m y c n e u q e r f t u p t u o 0 5 2z h m p t h l 1 e t o n ; h g i h - o t - w o l , y a l e d n o i t a g a p o r p 9 . 19 . 2s n t ) o ( k s4 , 2 e t o n ; w e k s t u p t u o 0 5 2s p t ) p p ( k s4 , 3 e t o n ; w e k s t r a p - o t - t r a p 0 0 9s p t r t / f e m i t l l a f / e s i r t u p t u o% 0 8 o t % 0 20 5 20 5 6s p c d oe l c y c y t u d t u p t u o ? z h m 3 3 15 45 5% ? < z h m 3 3 1 z h m 0 5 20 40 6% v m o r f d e r u s a e m : 1 e t o n d d v o t t u p n i e h t f o 2 / o d d . t u p t u o e h t f o 2 / . s n o i t i d n o c d a o l l a u q e h t i w d n a e g a t l o v y l p p u s e m a s e h t t a s t u p t u o n e e w t e b w e k s s a d e n i f e d : 2 e t o n v t a d e r u s a e m o d d . 2 / s e g a t l o v y l p p u s e m a s e h t t a g n i t a r e p o s e c i v e d t n e r e f f i d n o s t u p t u o n e e w t e b w e k s s a d e n i f e d : 3 e t o n d e r u s a e m e r a s t u p t u o e h t , e c i v e d h c a e n o s t u p n i f o e p y t e m a s e h t g n i s u . s n o i t i d n o c d a o l l a u q e h t i w d n a v t a o d d . 2 / . 5 6 d r a d n a t s c e d e j h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h t : 4 e t o n
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ics8302-01 l ow s kew , 1- to -2 lvcmos / lvttl f anout b uffer w / c omplementary o utput p arameter m easurement i nformation 3.3v/2.5v o utput l oad ac t est c ircuit 3.3v o utput l oad ac t est c ircuit scope qx lvcmos v dd , v ddo = 1.65v5% gnd = -1.65v5% scope qx lvcmos 2.05v5% gnd = -1.25v5% p ropagation d elay p art - to -p art s kew o utput r ise /f all t ime clock outputs 20% 80% 80% 20% t r t f t sk(o) v ddo 2 v ddo 2 q nq o utput s kew q nq part 1 part 2 nq t pd v dd 2 v ddo 2 v ddo 2 v ddo 2 odc & t p eriod t pw t period v ddo 2 t pw t period odc = v ddo 2 q clk 1.25v5% v dd v ddo nq tsk(pp) v dd 2 v ddo 2 v ddo 2 v ddo 2 q q
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ics8302-01 l ow s kew , 1- to -2 lvcmos / lvttl f anout b uffer w / c omplementary o utput t ransistor c ount the transistor count for ics8302-01 is: 322 t able 5. ja vs . a ir f low t able ja by velocity (linear feet per minute) 0 200 500 single-layer pcb, jedec standard test boards 153.3 c/w 128.5 c/w 115.5 c/w multi-layer pcb, jedec standard test boards 112.7 c/w 103.3 c/w 97.1 c/w note: most modern pcb designs use multi-layered boards. the data in the second row pertains to most designs. r eliability i nformation
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ics8302-01 l ow s kew , 1- to -2 lvcmos / lvttl f anout b uffer w / c omplementary o utput t able 6. p ackage d imensions reference document: jedec publication 95, ms-012 p ackage o utline - s uffix m l o b m y s s r e t e m i l l i m n u m i n i mm u m i x a m n8 a5 3 . 15 7 . 1 1 a0 1 . 05 2 . 0 b3 3 . 01 5 . 0 c9 1 . 05 2 . 0 d0 8 . 40 0 . 5 e0 8 . 30 0 . 4 ec i s a b 7 2 . 1 h0 8 . 50 2 . 6 h5 2 . 00 5 . 0 l0 4 . 07 2 . 1 0 8
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ics8302-01 l ow s kew , 1- to -2 lvcmos / lvttl f anout b uffer w / c omplementary o utput t able 7. o rdering i nformation while the information presented herein has been checked for both accuracy and reliability, integrated circuit systems, incorpor ated (ics) assumes no responsibility for either its use or for infringement of any patents or other rights of third parties, which would result from its use. no other circuits, patent s, or licenses are implied. this product is intended for use in normal commercial applications. any other applications such as those requiring extended temperature range, high reliability, or other extraordinary environmental requirements are not recommended without additional processing by ics. ics reserves the right to change any circuitry or specifications without notice. ics does not authorize or warrant any ics product for use in life support devices or critical medical instruments. r e b m u n r e d r o / t r a pg n i k r a me g a k c a pt n u o ce r u t a r e p m e t 1 0 - m a 2 0 3 8 s c i1 0 a 2 0 3 8c i o s d a e l 8e b u t r e p 6 9c 0 7 o t c 0 t 1 0 - m a 2 0 3 8 s c i1 0 a 2 0 3 8l e e r d n a e p a t n o c i o s d a e l 80 0 5 2c 0 7 o t c 0

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